Join The Discussion

 

Two from Fort Worth appointed by Gov. Abbott to university boards

Steve Hicks, a University of Texas System regent who has been a vocal opponent of regents who have criticized the system’s flagship campus in Austin, was reappointed to the board by Gov. Greg Abbott on Thursday. 

read more >

Fort Worth draws closer to deal with Lancaster developer

City staff are planning to introduce the developer Feb. 3 at a meeting of the City Council's Housing and Economic Development Committee.

read more >

Compass BBVA names Happel CEO for Fort Worth

BBVA Compass has appointed Brian Happel, most recently the Fort Worth city president, its chief executive officer of Fort Worth.

read more >

Fort Worth minority business receives nationwide grant

Cuevas Distribution Inc., a minority- and woman-owned business in Fort Worth, is one of 20 small businesses nationwide to receive a $150,000 grant from Chase as part of the Mission Main Street program.

read more >

Museum District: Area’s evolution creating more interaction, public spaces

Fifteen years ago if someone had shot a cannon from Fort Worth’s world-renowned museum district, nobody would have noticed, joked Lori Eklund, senior deputy director of the Amon Carter Museum of American Art. But that has changed.

read more >

 

TriQuint produces breakthrough transistor

Add right column body text here.

A. Lee Graham
Reporter
lgraham@bizpress.net

TriQuint Semiconductor Inc., with operations in Richardson, has produced the industry’s first gallium nitride transistors using wafers that reduce semiconductor temperatures while maintaining high radio-frequency performance.
The technology allows new generations of radio-frequency amplifiers up to three times smaller or offering up to three times the power of today’s gallium-nitride solutions, according to a company release..
“By increasing the thermal conductivity and reducing device temperature, we are enabling new generations of GaN (gallium nitride) devices that may be much smaller than today’s products,” said James L. Klein, vice president and general manager for the company’s infrastructure and defense products division, commenting in a news release.
“This gives significant RF (radio frequency) design and operational benefits for our commercial and defense customers,” Klein said.
Operating temperature largely determines high performance semiconductor reliability, the company pointed out. It’s especially critical for gallium nitride devices capable of high power densities.
In March, TriQuint received an award at the Compound Semiconductor Industry Awards 2013 in Frankfurt, Germany for its gallium nitride-on-diamond breakthrough. Klein emphasized that unlocking the true potential such circuits will hinge on achievements like those of TriQuint’s advanced research and development program.
TriQuint demonstrated its new gallium nitride-on-diamond, high electron mobility transistors in conjunction with partners at the University of Bristol, Group4 Labs and Lockheed Martin Corp. under the Defense Advanced Research Projects Agency’s (DARPA) Near Junction Thermal Transport program.
TriQuint Semiconductor, based in Hillsboro, Ore. and with other engineering and manufacturing facilities, provides radio-frequency solutions and foundry services for communications, defense and aerospace companies worldwide. More information is available at www.triquint.com.

 

< back

Email   email
hide
Catch
How 'bout them Cowboys?