Join The Discussion

 

Super PAC Men: How political consultants took a Fort Worth oilman on a wild ride

The head of a Texas oil dynasty joined the parade of wealthy political donors, aiming to flip the Senate to Republicans. By the time consultants were done with him, the war chest was drained and fraud allegations were flying

read more >

Bridge collapse on I-35 north of Austin

SALADO, Texas (AP) — Emergency crews are responding to a reported bridge collapse along an interstate in Central Texas.

read more >

Latin-inspired restaurant set to open in downtown Fort Worth

Downtown Fort Worth’s dining scene is about to get spicier with the opening of a new restaurant featuring Latin-inspired coastal cuisine.

read more >

Amazon begins Prime Now program in Dallas area

If you just have to have it now, as in one hour, you can, at least in the Dallas area, as Amazon.com Inc. announced Thursday it will offer Prime Now.

read more >

Texas jobless rate falls as employers add workers

Texas unemployment fell to 4.3 percent during February for the sixth straight month of declines, the Texas Workforce Commission reported Friday.

read more >

 

TriQuint produces breakthrough transistor

Add right column body text here.

A. Lee Graham
Reporter
lgraham@bizpress.net

TriQuint Semiconductor Inc., with operations in Richardson, has produced the industry’s first gallium nitride transistors using wafers that reduce semiconductor temperatures while maintaining high radio-frequency performance.
The technology allows new generations of radio-frequency amplifiers up to three times smaller or offering up to three times the power of today’s gallium-nitride solutions, according to a company release..
“By increasing the thermal conductivity and reducing device temperature, we are enabling new generations of GaN (gallium nitride) devices that may be much smaller than today’s products,” said James L. Klein, vice president and general manager for the company’s infrastructure and defense products division, commenting in a news release.
“This gives significant RF (radio frequency) design and operational benefits for our commercial and defense customers,” Klein said.
Operating temperature largely determines high performance semiconductor reliability, the company pointed out. It’s especially critical for gallium nitride devices capable of high power densities.
In March, TriQuint received an award at the Compound Semiconductor Industry Awards 2013 in Frankfurt, Germany for its gallium nitride-on-diamond breakthrough. Klein emphasized that unlocking the true potential such circuits will hinge on achievements like those of TriQuint’s advanced research and development program.
TriQuint demonstrated its new gallium nitride-on-diamond, high electron mobility transistors in conjunction with partners at the University of Bristol, Group4 Labs and Lockheed Martin Corp. under the Defense Advanced Research Projects Agency’s (DARPA) Near Junction Thermal Transport program.
TriQuint Semiconductor, based in Hillsboro, Ore. and with other engineering and manufacturing facilities, provides radio-frequency solutions and foundry services for communications, defense and aerospace companies worldwide. More information is available at www.triquint.com.

 

< back

Email   email
hide
Catch
How 'bout them Cowboys?